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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study

P. N. Hai, W. M. Chen, I. A. Buyanova, B. Monemar, H. Amano, and I. Akasaki
Phys. Rev. B 62, R10607(R) – Published 15 October 2000
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Abstract

A detailed study of as-grown Zn-doped GaN employing optically detected magnetic resonance (ODMR) spectroscopy is presented. Besides the well-known ODMR spectra of an effective-mass-like donor and Zn acceptor, a positive ODMR signal of an S=12 paramagnetic center was observed when monitoring the dominating blue luminescence band peaking at 2.8 eV. The involvement of a single Ga nucleus in the defect center is revealed from the rather well-resolved hyperfine interactions involving the isotopes 71Ga(39.9%) and 69Ga(60.1%), both with nuclear spin I=32. The C3v symmetry, the hyperfine interaction and the defect formation suggest a Ga-related complex nature of this center.

  • Received 27 July 2000

DOI:https://doi.org/10.1103/PhysRevB.62.R10607

©2000 American Physical Society

Authors & Affiliations

P. N. Hai, W. M. Chen, I. A. Buyanova, and B. Monemar

  • Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden

H. Amano and I. Akasaki

  • Department of Electrical and Electronical Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan

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Vol. 62, Iss. 16 — 15 October 2000

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