Antiferromagnetic <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>p</mi><mo>−</mo><mi>d</mi></math></span> exchange in ferromagnetic <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi>−</mi><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Mn</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mi mathvariant="normal">As</mi></math></span> epilayers

J. Szczytko; W. Mac; A. Twardowski; F. Matsukura; H. Ohno

doi:10.1103/PhysRevB.59.12935

Antiferromagnetic $p - d$ exchange in ferromagnetic ${Ga}_{1 - x} {Mn}_{x} As$ epilayers

J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, and H. Ohno

Phys. Rev. B 59, 12935 – Published 15 May 1999

Abstract

The $s, p - d$ exchange interaction of p-type ${Ga}_{1 - x} {Mn}_{x} As (x < 0.05)$ epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic $p - d$ exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.

Received 2 December 1998

DOI:https://doi.org/10.1103/PhysRevB.59.12935

Authors & Affiliations

J. Szczytko, W. Mac, and A. Twardowski

Institute of Experimental Physics, Warsaw University, Hoża 69, 00681 Warsaw, Poland

F. Matsukura and H. Ohno

Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

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Vol. 59, Iss. 20 — 15 May 1999

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