A theoretical study of one-phonon resonant Raman scattering in diamond- and zinc-blende-type semiconductors in crossed electric (E) and magnetic (B) fields has been performed. We consider the deformation potential and Fröhlich interactions for the electron–one-phonon coupling. Explicit expressions for the Raman intensity as a function of the laser energy and the applied electric and magnetic fields are given. For a fixed laser frequency the Raman intensity decreases exponentially with increasing electric field. It is shown that the selection rule $\Delta n=0,$ where n is the Landau quantum number, is broken and new outgoing and incoming resonances with respect to $E=0\mathrm{}$ and $B\ne 0$ are obtained.

• Received 14 May 1998

DOI:https://doi.org/10.1103/PhysRevB.58.9104