Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well

T. Wang, F. Kieseling, and A. Forchel
Phys. Rev. B 58, 3594 – Published 15 August 1998
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Abstract

A 6.5-nm coupled double GaSb/AlSb quantum well separated by 1, 2, 3 or 4 monolayers AlSb has been investigated by photoluminescence spectroscopy at a temperature of 2 K. When the AlSb layer thickness is more than 1 monolayer (ML), this system changes from direct to indirect energy-band structure, which is well described by a model based on a finite potential well and transmission probability.

  • Received 20 April 1998

DOI:https://doi.org/10.1103/PhysRevB.58.3594

©1998 American Physical Society

Authors & Affiliations

T. Wang*, F. Kieseling, and A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

  • *Author to whom correspondence should be sent. Present address: Sakai Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Tokushima 770, Japan.

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Vol. 58, Iss. 7 — 15 August 1998

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