Growth-mode modification of Bi on CdTe(111)A using Te monolayer deposition

Sunglae Cho, Antonio DiVenere, George K. Wong, John B. Ketterson, Jerry R. Meyer, and Jung-Il Hong
Phys. Rev. B 58, 2324 – Published 15 July 1998
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Abstract

Bi deposited on the CdTe(111)A (Cd-terminated) surface grows by three-dimensional (3D) islanding, while Bi deposited on the CdTe(111)B (Te-terminated) grows layer-by-layer. However, introducing a Te monolayer (ML) on the CdTe(111)A surface reduces the interfacial energy, thereby changing the growth mode of Bi from 3D islandlike to layer-by-layer growth. The Te ML remains where it is deposited, which differs from the growth mode in which the surface-active agent floats on the growing surface. By incorporating appropriate Te ML’s, Bi/CdTe superlattices with sharper interfaces were observed. These superlattices were characterized by x-ray diffraction and transmission electron microscopy.

  • Received 12 December 1997

DOI:https://doi.org/10.1103/PhysRevB.58.2324

©1998 American Physical Society

Authors & Affiliations

Sunglae Cho, Antonio DiVenere, George K. Wong, and John B. Ketterson

  • Department of Physics and Astronomy and Material Research Center, Northwestern University, Evanston, Illinois 60208

Jerry R. Meyer

  • Code 5613, Naval Research Laboratory, Washington, D.C. 20375-5338

Jung-Il Hong

  • Department of Material Science and Engineering, Northwestern University, Evanston, Illinois 60208

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Vol. 58, Iss. 4 — 15 July 1998

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