Electronic structure of the deep boron acceptor in boron-doped <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>6</mn><mi>H</mi></math></span>-SiC

A. v. Duijn-Arnold; T. Ikoma; O. G. Poluektov; P. G. Baranov; E. N. Mokhov; J. Schmidt

doi:10.1103/PhysRevB.57.1607

Electronic structure of the deep boron acceptor in boron-doped $6 H$ -SiC

A. v. Duijn-Arnold, T. Ikoma, O. G. Poluektov, P. G. Baranov, E. N. Mokhov, and J. Schmidt

Phys. Rev. B 57, 1607 – Published 15 January 1998

Abstract

A high-frequency (95 GHz) and conventional-frequency (9.3 GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance (ENDOR) study is reported on the deep boron acceptor in $6 H$ -SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon position with an adjacent carbon vacancy. The carbon vacancy combines with a boron along the hexagonal $c$ axis. It is concluded that 70–90% of the spin density resides in the silicon dangling bonds surrounding the vacancy and another 9% on the neighboring carbon atoms. The spin-density distribution is more localized than in the case of the shallow boron acceptor as deduced from the ENDOR experiments.