Abstract
We report on detailed Hall-effect measurements of thin films of above and below the metal-insulator transition. In the metallic ferromagnetic regime, we find a temperature-independent holelike nominal charge-carrier density per unit cell, consistent with a partly compensated Fermi surface. The mobility is only 92 at 4 K, and decreases with increasing temperature. Huge negative magnetoresistivity results from an increase in mobility. In low magnetic fields or at high temperatures, an anomalous electronlike contribution dominates the Hall voltage. For possible side jumps, we estimate an average jump length of the electron wave packet of .
- Received 4 February 1998
DOI:https://doi.org/10.1103/PhysRevB.57.10252
©1998 American Physical Society