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Zeeman splittings of excitonic transitions at the Γ point in wurtzite GaN: A magnetoreflectance investigation

J. Campo, M. Julier, D. Coquillat, J. P. Lascaray, D. Scalbert, and O. Briot
Phys. Rev. B 56, R7108(R) – Published 15 September 1997
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Abstract

Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the XA and XC excitons and almost zero for the XB exciton. Reflectance and dichroism are interpreted with a model of Gaussian dispersion of the excitonic energies and are in excellent agreement with previously proposed band-edge models.

  • Received 17 March 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R7108

©1997 American Physical Society

Authors & Affiliations

J. Campo, M. Julier, D. Coquillat, J. P. Lascaray, D. Scalbert, and O. Briot

  • Groupe d’Etudes des Semiconducteurs, c.c. 074, URA 357 CNRS, Université Montpellier II, place Eugène Bataillon, 34095 Montpellier CEDEX 5, France

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Vol. 56, Iss. 12 — 15 September 1997

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