Single-electron tunneling at high temperature

P. Joyez and D. Esteve
Phys. Rev. B 56, 1848 – Published 15 July 1997; Erratum Phys. Rev. B 58, 15912 (1998)
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Abstract

The electromagnetic environment in which a small tunnel junction circuit is embedded plays a crucial role in its transport properties. Although the theory of single-electron tunneling is well established, few analytical results are known. We use a real-time formulation to obtain new predictions for the high-temperature conductance of single- and double-junction systems in series with a resistor. We discuss the implications of our results for recently proposed metrological thermometry based on Coulomb blockade of single-electron tunneling.

  • Received 17 December 1996

DOI:https://doi.org/10.1103/PhysRevB.56.1848

©1997 American Physical Society

Erratum

Authors & Affiliations

P. Joyez and D. Esteve

  • Service de Physique de l’Etat Condensé, CEA-Saclay, 91191 Gif-sur-Yvette, France

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Vol. 56, Iss. 4 — 15 July 1997

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