• Rapid Communication

Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells

Yukio Narukawa, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, and Shuji Nakamura
Phys. Rev. B 55, R1938(R) – Published 15 January 1997
PDFExport Citation

Abstract

Dynamical behavior of radiative recombination has been assessed in the In0.20Ga0.80N (2.5 nm)/ In0.05Ga0.95N (6.0 nm) multiple-quantum-well structure by means of transmittance, electroreflectance (ER), photoluminescence excitation (PLE), and time-resolved photoluminescence (TRPL) spectroscopy. The PL at 20 K was mainly composed of two emission bands whose peaks are located at 2.920 eV and 3.155 eV. Although the peak at 3.155 eV was weak under low photoexcitation, it grew superlinearly with increasing excitation intensity. The ER and PLE revealed that the transition at 3.155 eV is due to the excitons at quantized levels between n=1 conduction and n=1 A(Γ9v) valence bands, while the main PL peak at 2.920 eV is attributed to the excitons localized at the trap centers within the well. The TRPL features were well understood as the effect of localization where photogenerated excitons are transferred from the n=1 band to the localized centers, and then are localized further to the tail state.

    DOI:https://doi.org/10.1103/PhysRevB.55.R1938

    ©1997 American Physical Society

    Authors & Affiliations

    Yukio Narukawa, Yoichi Kawakami, Shizuo Fujita, and Shigeo Fujita

    • Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan

    Shuji Nakamura

    • Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

    References (Subscription Required)

    Click to Expand
    Issue

    Vol. 55, Iss. 4 — 15 January 1997

    Reuse & Permissions
    Access Options

    Authorization Required


    ×
    ×

    Images

    ×

    Sign up to receive regular email alerts from Physical Review B

    Log In

    Cancel
    ×

    Search


    Article Lookup

    Paste a citation or DOI

    Enter a citation
    ×