Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction

J. H. R. dos Santos, P. L. Grande, M. Behar, H. Boudinov, and G. Schiwietz
Phys. Rev. B 55, 4332 – Published 15 February 1997
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Abstract

We present measurements of the stopping power of 800-keV He4 ions channeled along the Si〈100〉 axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schrödinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results.

    DOI:https://doi.org/10.1103/PhysRevB.55.4332

    ©1997 American Physical Society

    Authors & Affiliations

    J. H. R. dos Santos, P. L. Grande, M. Behar, and H. Boudinov

    • Instituto de Física da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970, Porto Alegre, Brazil

    G. Schiwietz

    • Bereich F, Hahn-Meitner-Institut Berlin, Glienicker Strasse 100, D-14109 Berlin, Germany

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    Issue

    Vol. 55, Iss. 7 — 15 February 1997

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