Temperature dependence of the fundamental direct transitions of bulk Ge and two Ge/SiGe multiple-quantum-well structures

Yichun Yin; D. Yan; Fred H. Pollak; Mark S. Hybertsen; J. M. Vandenberg; J. C. Bean

doi:10.1103/PhysRevB.52.8951

Temperature dependence of the fundamental direct transitions of bulk Ge and two Ge/SiGe multiple-quantum-well structures

Yichun Yin, D. Yan, Fred H. Pollak, Mark S. Hybertsen, J. M. Vandenberg, and J. C. Bean

Phys. Rev. B 52, 8951 – Published 15 September 1995

Abstract

From a detailed line-shape fit to piezoreflectance spectra, we have evaluated the temperature dependence (19<T<420 K) of the energies [E(T)] and broadening parameters [Γ(T)] of the fundamental direct transitions in bulk Ge and two narrow Ge/GeSi multiple-quantum-well structures. The experimental broadening parameters are compared with theoretical expressions. No significant dimensionality dependence of Γ(T) was observed, in contrast to polar systems. On the other hand, in agreement with polar materials, E(T) of the microstructures was found to be the same as the constituent bulk well material.

Received 27 March 1995

DOI:https://doi.org/10.1103/PhysRevB.52.8951

Authors & Affiliations

Yichun Yin, D. Yan, and Fred H. Pollak

Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210

Mark S. Hybertsen, J. M. Vandenberg, and J. C. Bean

AT&T Bell Telephone Laboratories, Murray Hill, New Jersey 07974

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Vol. 52, Iss. 12 — 15 September 1995

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Physical Review B

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