First-principles simulated-annealing study of phase transitions and short-range order in transition-metal and semiconductor alloys

Z. W. Lu, D. B. Laks, S.-H. Wei, and Alex Zunger
Phys. Rev. B 50, 6642 – Published 1 September 1994
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Abstract

Total-energy local-density calculations on approximately 20 periodic crystal structures of a given AB compound are used to define a long-range Ising Hamiltonian which correctly represents atomic relaxations. This allows us to accurately calculate structural energies of relaxed substitutional A1xBx systems containing thousands of transition-metal atoms, simply by adding up spin products in the Ising Hamiltonian. The computational cost is thus size independent. We then apply Monte Carlo and simulated-annealing techniques to this Ising Hamiltonian, finding (i) the T=0 ground-state structures, (ii) the order-disorder transition temperatures Tc, and (iii) the T>Tc short-range-order parameters. The method is illustrated for a transition-metal alloy (Cu1xPdx) and a semiconductor alloy (Ga1xInxP). It extends the applicability of the local-density method to finite temperatures and to huge substitutional supercells. We find for Cu0.75Pd0.25 a characteristic fourfold splitting of the diffuse scattering intensity due to short-range order as observed experimentally.

  • Received 3 May 1994

DOI:https://doi.org/10.1103/PhysRevB.50.6642

©1994 American Physical Society

Authors & Affiliations

Z. W. Lu, D. B. Laks, S.-H. Wei, and Alex Zunger

  • National Renewable Energy Laboratory, Golden, Colorado 80401

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Issue

Vol. 50, Iss. 10 — 1 September 1994

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