• Rapid Communication

Initial growth of Bi films on a Si(111) substrate: Two phases of √3 × √3 low-energy-electron-diffraction pattern and their geometric structures

K. J. Wan, T. Guo, W. K. Ford, and J. C. Hermanson
Phys. Rev. B 44, 3471(R) – Published 15 August 1991
PDFExport Citation

Abstract

The ordering of Bi on a Si(111)-7×7 surface was studied as a function of overlayer coverage and deposition conditions using low-energy-electron diffraction (LEED) and Auger electron spectroscopy. We observed a one-third-monolayer and a saturated one-monolayer phase. Both phases displayed identical √3 × √3- R30° LEED symmetries. LEED intensity data were used to differentiate between the two phases and to determine a quantitative atomic geometry via a thorough dynamical LEED analysis.

  • Received 19 April 1991

DOI:https://doi.org/10.1103/PhysRevB.44.3471

©1991 American Physical Society

Authors & Affiliations

K. J. Wan, T. Guo, W. K. Ford, and J. C. Hermanson

  • Advanced Materials Center and Department of Physics, Montana State University, Bozeman, Montana 59717

References (Subscription Required)

Click to Expand
Issue

Vol. 44, Iss. 7 — 15 August 1991

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×