Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Γ and X valleys in GaAs/AlxGa1xAs

T. Ando and H. Akera
Phys. Rev. B 40, 11619 – Published 15 December 1989
PDFExport Citation

Abstract

The effective-mass approximation is extended so as to take into account mixings between Γ and X conduction-band valleys at heterointerfaces consisting of AlxGa1xAs with different x’s. Effects of the mixings are included by boundary conditions expressed in terms of a 6×6 interface matrix that gives a set of linear relations among envelope functions and their derivatives at the interface. The interface matrix is calculated in an sps* tight-binding model with only nearest-neighbor transfer integrals. The intervalley couplings, although not so large, can be represented by two off-diagonal elements of the interface matrix. The usefulness of the present formulation is demonstrated by actual calculations of transmissions and reflections across a single interface and a single barrier structure and also of energy levels in multiple quantum wells. The interface-matrix formalism is extended to treat tunnelings across high barriers to which the envelope-function approximation is not applicable.

  • Received 14 March 1989

DOI:https://doi.org/10.1103/PhysRevB.40.11619

©1989 American Physical Society

Authors & Affiliations

T. Ando and H. Akera

  • Institute for Solid State Physics, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

See Also

References (Subscription Required)

Click to Expand
Issue

Vol. 40, Iss. 17 — 15 December 1989

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×