Abstract
Inverse photoemission has been used to probe the microscopic evolution of the semiconductor/superconductor interface . We find little or no reaction until the Ge coverage reaches 1 Å and that the reaction is quickly saturated when the nominal coverage reaches Å6 Å. The reaction is characterized by the reduction of the antibonding electronic states straddling the Fermi level and the shift of empty-state features toward . Large apparent electron mean free paths deduced from the attenuation of La peaks suggest cluster and island formation in the interface.
- Received 16 September 1987
DOI:https://doi.org/10.1103/PhysRevB.37.515
©1988 American Physical Society