Strong-perturbation theory for impurities in semiconductors

H. X. Jiang
Phys. Rev. B 35, 9287 – Published 15 June 1987
PDFExport Citation

Abstract

An improved version of the perturbation theory has been proposed. Expressions for the wave functions and energies of both degenerate and nondegenerate cases are derived. This method provides a simple way to treat problems involving more than one potential in the Hamiltonian and the case when the perturbations are comparable with or larger than the unperturbed Hamiltonian. We use this method to study the ground state of a hydrogenic atom in a uniform magnetic field of arbitrary strength in which the usual perturbation treatment is limited for most semiconductors to a small range of magnetic field.

  • Received 17 December 1986

DOI:https://doi.org/10.1103/PhysRevB.35.9287

©1987 American Physical Society

Authors & Affiliations

H. X. Jiang

  • Center for Fundamental Materials Research, and Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-1116

References (Subscription Required)

Click to Expand
Issue

Vol. 35, Iss. 17 — 15 June 1987

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×