Resonance Raman scattering in InSb: Deformation potentials and interference effects at the E1 gap

J. Menéndez, L. Via, M. Cardona, and E. Anastassakis
Phys. Rev. B 32, 3966 – Published 15 September 1985
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Abstract

This paper presents a reevaluation of the optical-phonon deformation potential constants near the E1 gap of InSb. The absolute values of the deformation potentials d1,05 and d3,05 are obtained from a measurement of the Raman efficiency for allowed LO-phonon scattering and a fit of previous uniaxial-stress experiments by using new ellipsometric data for the optical susceptibility. The signs of the deformation potentials are deduced from a study of the interference between the amplitudes for forbidden and allowed LO-Raman scattering. The values obtained are d1,05=-16.2±4 eV and d3,05=32.9±8 eV. The study of the interference also provides information about the relative weight of different sources of forbidden LO-Raman scattering.

  • Received 15 March 1985

DOI:https://doi.org/10.1103/PhysRevB.32.3966

©1985 American Physical Society

Authors & Affiliations

J. Menéndez, L. Via, M. Cardona, and E. Anastassakis

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany

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Issue

Vol. 32, Iss. 6 — 15 September 1985

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