Angle-resolved photoelectron spectroscopy investigation of intrinsic surface states on the Ge(001)-(2 × 1) reconstructed surface

Jeffrey G. Nelson; William J. Gignac; R. Stanley Williams; Steven W. Robey; J. G. Tobin; D. A. Shirley

doi:10.1103/PhysRevB.27.3924

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Angle-resolved photoelectron spectroscopy investigation of intrinsic surface states on the Ge(001)-(2 × 1) reconstructed surface

Jeffrey G. Nelson, William J. Gignac, R. Stanley Williams, Steven W. Robey, J. G. Tobin, and D. A. Shirley

Phys. Rev. B 27, 3924(R) – Published 15 March 1983

Abstract

Synchrotron-radiation-excited angle-resolved photoelectron spectra of the Ge(001)-(2 × 1) reconstructed surface reveal two surface states 0.6 and 1.3 eV below the bulk valence-band maximum at the $Γ$ point of the surface Brillouin zone. These two states are similar to those observed previously for Si(001) and GaAs(001) surfaces. The dispersion of the Ge bands with $k_{∥}$ is qualitatively in agreement with the calculations of Chadi using his asymmetric dimer model for Si(001)-(2 × 1).

Received 17 December 1982

DOI:https://doi.org/10.1103/PhysRevB.27.3924

Authors & Affiliations

Jeffrey G. Nelson, William J. Gignac, and R. Stanley Williams

Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90024

Steven W. Robey, J. G. Tobin, and D. A. Shirley

Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
Departments of Chemistry and Physics, University of California, Berkeley, California 94720

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Vol. 27, Iss. 6 — 15 March 1983

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Physical Review B

covering condensed matter and materials physics