Slater-Koster parametrization for Si and the ideal-vacancy calculation

D. A. Papaconstantopoulos and E. N. Economou
Phys. Rev. B 22, 2903 – Published 15 September 1980
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Abstract

A Slater-Koster Hamiltonian for Si is constructed using four (one s and three p) orthogonal orbitals per site. This Hamiltonian reproduces reasonably accurately the empirical pseudopotential band structure not only for the valence but for the conduction band as well. It also determines correctly the position of the bound level of an unreconstructed vacancy demonstrating thus that the effects of electronic self-consistency are minor.

  • Received 20 February 1980

DOI:https://doi.org/10.1103/PhysRevB.22.2903

©1980 American Physical Society

Authors & Affiliations

D. A. Papaconstantopoulos

  • Naval Research Laboratory, Washington, D.C. 20375

E. N. Economou

  • Department of Physics, McCormic Road, University of Virginia, Charlottesville, Virginia 22901

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Issue

Vol. 22, Iss. 6 — 15 September 1980

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