Phys. Rev. B 14, 4724 - 4726 (1976)Relaxation effects on the (110) surface of GaAs |
PRL Celebrates 50 Years
This Week's Milestone Letters are from 1984: |
James R. Chelikowsky *,†, Steven G. Louie ‡, and Marvin L. Cohen
Department of Physics, University of California, and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
Received 12 April 1976
A commonly assumed model for the relaxed GaAs (110) surface is considered. This model can account for the insensitivity of the empty cation-derived surface states to metal overlayers, and the lack of evidence for occupied anion surface states in recent photoemission measurements. With relaxation of the surface, we find that the empty cation-derived surface band becomes more dispersive. The center of mass lies above the conduction-band minimum; however, the threshold of the surface band remains within the bulk band gap.
©1976 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v14/p4724
DOI: 10.1103/PhysRevB.14.4724
* Supported by a National Science Foundation Postdoctoral Energy Fellowship.
† Present address: Bell Laboratories, Murray Hill, N. J. 07974.
‡ Supported by a National Science Foundation Fellowship.
See Also
Original: J. D. Joannopoulos and Marvin L. Cohen, Intrinsic surface states of (110) surfaces of group IV and III-V semiconductors, Phys. Rev. B 10, 5075 (1974)
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