• Letter

Surface valence transition in SmS by alkali metal adsorption

Takuto Nakamura, Toru Nakaya, Yoshiyuki Ohtsubo, Hiroki Sugihara, Kiyohisa Tanaka, Ryu Yukawa, Miho Kitamura, Hiroshi Kumigashira, Keiichiro Imura, Hiroyuki S. Suzuki, Noriaki K. Sato, and Shin-ichi Kimura
Phys. Rev. B 107, L041102 – Published 5 January 2023
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Abstract

The electronic structure changes of SmS surfaces under potassium (K) doping are elucidated using synchrotron-based core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy (ARPES). The Sm core-level and ARPES spectra indicate that the Sm mean valence of the surface increased from the nearly divalent to trivalent states, with increasing K deposition. Carrier-induced valence transition (CIVT) from Sm2+ to Sm3+ exhibits a behavior opposite to that under conventional electron doping. Excess electrons from K atoms are transferred to S sites and the liberated electrons from Sm3+ ions due to CIVT at the surface are trapped like local excitons around the Sm3+ ions, which is inconsistent with the phase transition from the black insulator with Sm2+ to the gold metal with Sm3+ under pressure. This CIVT helps to clarify the pressure-induced black-to-golden phase transition in this material, which originates from the Mott transition of excitons.

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  • Received 30 May 2022
  • Revised 13 December 2022
  • Accepted 14 December 2022

DOI:https://doi.org/10.1103/PhysRevB.107.L041102

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Takuto Nakamura1,2,*, Toru Nakaya2, Yoshiyuki Ohtsubo3,1,2, Hiroki Sugihara2, Kiyohisa Tanaka4, Ryu Yukawa5, Miho Kitamura6, Hiroshi Kumigashira7, Keiichiro Imura8,†, Hiroyuki S. Suzuki9, Noriaki K. Sato8,10, and Shin-ichi Kimura1,2,4,‡

  • 1Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871, Japan
  • 2Department of Physics, Graduate School of Science, Osaka University, Toyonaka 560-0043, Japan
  • 3National Institutes for Quantum Science and Technology, Sendai 980-8579, Japan
  • 4Institute for Molecular Science, Okazaki 444-8585, Japan
  • 5Graduate School of Engineering, Osaka University, Suita 565-0871, Japan
  • 6Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan
  • 7Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
  • 8Department of Physics, Nagoya University, Nagoya 464-8602, Japan
  • 9Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan
  • 10Center for General Education, Aichi Institute of Technology, Toyota 470-0392, Japan

  • *nakamura.takuto.fbs@osaka-u.ac.jp
  • Present address: National Institutes for Institute of Liberal Arts and Sciences, Nagoya University, Nagoya 464-8601, Japan.
  • kimura.shin-ichi.fbs@osaka-u.ac.jp

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Issue

Vol. 107, Iss. 4 — 15 January 2023

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