We study the electronic transport properties in a tilted $n\text{−}p\text{−}n$ junction of monolayer $1T^{\prime }\text{−}{\mathrm{MoS}}_2$ under a vertical electric field. The analytical derivations and numerical results show that, since the spin degeneracy of the anisotropic bands of monolayer $1T^{\prime }\text{−}{\mathrm{MoS}}_2$ is lifted by the electric field $E_z$, electrically tunable valley- and spin-dependent electron retroreflection occurs in the tilted $n\text{−}p\text{−}n$ junction. It is also found that when the electric field $E_z$ is adjusted to a critical value $E_c$, valley- and spin-dependent Klein tunneling happens in the $n\text{−}p\text{−}n$ junction, and the incident angle of Klein tunneling depends on the tilt angle of the junction. Especially, for a certain specific tilt angle, in the case of normal incidence, only a spin-up electron from the $K$ valley can undergo Klein tunneling. Our work offers an efficient mechanism to modulate valley- and spin-dependent electron retroreflection and Klein tunneling in anisotropic tilted Dirac systems.

• Received 21 September 2022
• Accepted 21 December 2022

DOI:https://doi.org/10.1103/PhysRevB.107.035301