Abstract
The foundational Franz-Keldysh effect and Einstein model are applied in this work to characterize semiconductor band-edge absorption—and its departures from ideality. We unify the Franz-Keldysh and Einstein models to fully characterize the field-induced tunneling of photoexcited electrons from degenerate valence bands into the conduction band, with encroachment into the band gap arising as an Urbach tail. Our unified model is implemented for semi-insulating indium phosphide (SI-InP) with strong agreement seen between the theoretical and experimental results for varied photon energies and electric fields.
- Received 6 September 2021
- Revised 1 February 2022
- Accepted 23 March 2022
DOI:https://doi.org/10.1103/PhysRevB.105.155203
©2022 American Physical Society
Physics Subject Headings (PhySH)
Condensed Matter, Materials & Applied Physics
