Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

Shoya Sakamoto, Le Duc Anh, Pham Nam Hai, Yukiharu Takeda, Masaki Kobayashi, Yuki K. Wakabayashi, Yosuke Nonaka, Keisuke Ikeda, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, and Atsushi Fujimori
Phys. Rev. B 101, 075204 – Published 13 February 2020
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Abstract

We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300μB400μB and the fraction of Fe atoms participating in the nanoscale ferromagnetism to be 50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism, probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.

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  • Received 11 February 2019
  • Revised 17 October 2019
  • Accepted 27 January 2020
  • Corrected 12 May 2020

DOI:https://doi.org/10.1103/PhysRevB.101.075204

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

12 May 2020

Correction: The order of authors has been modified, and the affiliations are now identified by superscript numbers. A second affiliation has been added for the last author.

Authors & Affiliations

Shoya Sakamoto1, Le Duc Anh2,3, Pham Nam Hai4,2,5, Yukiharu Takeda6, Masaki Kobayashi2,5, Yuki K. Wakabayashi2, Yosuke Nonaka1, Keisuke Ikeda1, Zhendong Chi1, Yuxuan Wan1, Masahiro Suzuki1, Yuji Saitoh6, Hiroshi Yamagami6,7, Masaaki Tanaka2,5, and Atsushi Fujimori1,6

  • 1Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3Institute of Engineering Innovation, The University of Tokyo, Bunkyo-ku, Tokyo 133-8656, Japan
  • 4Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-0033, Japan
  • 5Center for Spintronics Research Network (CSRN), The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 6Materials Sciences Research Center, Japan Atomic Energy Agency (JAEA), Sayo-gun, Hyogo 679-5148, Japan
  • 7Department of Physics, Kyoto Sangyo University, Kyoto 603-8555, Japan

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Issue

Vol. 101, Iss. 7 — 15 February 2020

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