Neutral Silicon-Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Zi-Huai Zhang, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, and Nathalie P. de Leon
Phys. Rev. Applied 19, 034022 – Published 7 March 2023

Abstract

Neutral silicon-vacancy (Si-V0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of Si-V0 centers requires careful Fermi-level engineering of the diamond host material, making further technological development challenging. Here, we show that Si-V0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting Si-V0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of Si-V0 centers as well as other emerging quantum defects in diamond.

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  • Received 18 September 2022
  • Revised 8 December 2022
  • Accepted 31 January 2023

DOI:https://doi.org/10.1103/PhysRevApplied.19.034022

© 2023 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & Technology

Authors & Affiliations

Zi-Huai Zhang1, Andrew M. Edmonds2, Nicola Palmer2, Matthew L. Markham2, and Nathalie P. de Leon1,*

  • 1Department of Electrical and Computer Engineering, Princeton University, USA
  • 2Element Six, Harwell OX11 0QR, United Kingdom

  • *npdeleon@princeton.edu

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Vol. 19, Iss. 3 — March 2023

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