Thermoelectric Origin of Giant Nonreciprocal Charge Transport in NbAs Nanobelts

Cheng Zhang, Xiang Yuan, Jinglei Zhang, Pengliang Leng, Yicheng Mou, Zhuoliang Ni, Hongming Zhang, Chenglin Yu, Yunkun Yang, and Faxian Xiu
Phys. Rev. Applied 15, 034084 – Published 29 March 2021

Abstract

Recently, nonreciprocal charge transport has emerged as an important experimental tool for detecting symmetry breaking in noncentrosymmetric crystals. Despite extensive studies on systems with intrinsic symmetry breaking from crystal structures or interfaces, nonreciprocal transport induced by extrinsic mechanisms, such as the asymmetric design of device geometry, remains largely unexplored. Here, we show that a giant nonreciprocal resistance arises extrinsically from the thermoelectric effect due to nonuniform current heating in mesoscopic devices. Taking NbAs nanobelts as an example, we observe giant second-harmonic resistances induced by the Seebeck and Nernst effects, with a nonreciprocal coefficient value up to 5.4 × 106cm2/A, which is higher than that of most noncentrosymmetric crystals. The symmetry of second-harmonic resistance in magnetic fields can be further controlled by designing the electrode geometry and is decoupled from that of the first-harmonic resistance or the crystal symmetry. We show that such thermoelectric related nonreciprocal resistances also exist in macroscopic samples up to hundreds of microns. Our results not only introduce a simple yet effective approach to probe the thermoelectric effect, but also reveal a previously underestimated mechanism that strongly modifies the second-order transport coefficients.

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  • Received 8 December 2020
  • Revised 24 February 2021
  • Accepted 12 March 2021

DOI:https://doi.org/10.1103/PhysRevApplied.15.034084

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cheng Zhang1,2,*,‡, Xiang Yuan2,3,‡, Jinglei Zhang4,‡, Pengliang Leng2, Yicheng Mou1, Zhuoliang Ni2, Hongming Zhang2, Chenglin Yu2, Yunkun Yang2, and Faxian Xiu1,2,5,6,†

  • 1Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 2State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
  • 3State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
  • 4Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei 230031, China
  • 5Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 6Shanghai Research Center for Quantum Sciences, Shanghai 201315, China

  • *zhangcheng@fudan.edu.cn
  • faxian@fudan.edu.cn
  • These authors contributed equally to this work.

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Vol. 15, Iss. 3 — March 2021

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