Charge-Transfer-Induced Interfacial Exchange Coupling at the Co/BiFeO3 Interface

Jianwei Meng, Kai Chen, Emin Mijit, Dongfang Chen, Fadi Choueikani, Zhiqiang Zou, Lingling Wang, Gang Mu, Wenping Geng, Qingyu Kong, Anquan Jiang, Xi-Jing Ning, and Tsu-Chien Weng
Phys. Rev. Applied 12, 044010 – Published 4 October 2019
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Abstract

The interplay between ferroelectricity and magnetism in multiferroic materials is of great scientific and technological interest, allowing magnetic control of ferroelectric properties and electric control of magnetic properties through the magnetoelectric coupling from interfacial strain, exchange bias, or charge-transfer process. We report the charge transfer at the Co/BiFeO3 interface from which the interfacial exchange coupling is achieved with the formation of Fe2+. The x-ray linear dichroism and x-ray magnetic circular dichroism results reveal that the strain as well as the exchange coupling Jex in BiFeO3 (BFO) with periodic 109° domains are stronger than that in BFO with 71° domains, resulting in the higher coercive field of Co/BFO with 109° domain samples. The possible electric field control of the charge-transfer process at the Co/BFO interface enables an alternative class of electrically controllable magnetization, exchange bias, and giant magnetoresistive response of spintronic devices.

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  • Received 24 May 2019
  • Revised 29 July 2019
  • Corrected 5 January 2023

DOI:https://doi.org/10.1103/PhysRevApplied.12.044010

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

5 January 2023

Correction: The author name Yimin Mijiti has been changed to Emin Mijit.

Authors & Affiliations

Jianwei Meng1,2,3,†, Kai Chen2,4,5,†, Emin Mijit4, Dongfang Chen6, Fadi Choueikani4, Zhiqiang Zou3, Lingling Wang7, Gang Mu7, Wenping Geng8, Qingyu Kong4, Anquan Jiang6, Xi-Jing Ning1, and Tsu-Chien Weng2,3,*

  • 1Institute of modern physics, Fudan University, Shanghai 200433, China
  • 2High Pressure for Science & Technology Advanced Research, Shanghai 201203, China
  • 3School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 4SOLEIL, l’Orme des Merisiers, St. Aubin, BP48, 91192 Gif sur Yvette Cedex, France
  • 5Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, 12489 Berlin, Germany
  • 6State Key Laboratory of ASIC and system, School of Microelectronics, Fudan University, Shanghai 200433, China
  • 7State Key Laboratory of Functional Materials for informatics, Shanghai Institute of Microsystem and information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 8Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, China

  • *wengzq@shanghaitech.edu.cn
  • These authors contributed equally.

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Issue

Vol. 12, Iss. 4 — October 2019

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