Elementary Sisyphus process close to a dielectric surface

Pierre Desbiolles, Markus Arndt, Pascal Szriftgiser, and Jean Dalibard
Phys. Rev. A 54, 4292 – Published 1 November 1996
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Abstract

We investigate both theoretically and experimentally an elementary Sisyphus process occurring during the reflection of an atom onto a laser evanescent wave propagating at the surface of a dielectric prism. Cesium atoms bouncing at normal incidence may undergo a spontaneous Raman transition between their two hyperfine levels; this leads to an efficient cooling since those levels are light shifted by a different amount by the laser-atom interaction thanks to the large hyperfine splitting. We compare the measured final energy distributions after the bounce with Monte Carlo simulations. A quantitative agreement is obtained when the van der Waals interaction between the cesium atoms and the dielectric prism is taken into account. © 1996 The American Physical Society.

  • Received 27 March 1996

DOI:https://doi.org/10.1103/PhysRevA.54.4292

©1996 American Physical Society

Authors & Affiliations

Pierre Desbiolles, Markus Arndt, Pascal Szriftgiser, and Jean Dalibard

  • Laboratoire Kastler Brossel, 24 rue Lhomond, F-75231 Paris Cedex 05, France

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Vol. 54, Iss. 5 — November 1996

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