Abstract
Ultrahigh-resolution (436-eV full width at half-maximum at 14.4 keV) Ge(Li) and Si(Li) x-ray detectors have been used to investigate x rays of Bi from the decay of carrier-free (). A detailed study of the detection efficiencies was carried out, in order to take into account effects due to Ge x-ray escape, and absorption in layers of inactive Ge or Si, Au, Al, and Be present between the source and active detector volume. A DuPont curve-resolving analog computer was used to resolve the x-ray spectrum into further components. The resolved spectra thus yielded 10 x-ray groups, together with their absolute intensities in decay. Combining these results with recent precision -conversion and Auger electron absolute intensities in this decay, the following set of -subshell fluorescence yields (), Auger yields (), and Coster-Kronig transition probabilities () are obtained: , , and ; , , and ; and . Using the recent value of at , determined by Rao et al., the following additional quantities are evaluated: , , , and . A remarkably strong x-ray transition () also was observed in the decay of ().
- Received 6 September 1968
DOI:https://doi.org/10.1103/PhysRev.178.1952
©1969 American Physical Society