Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor Films

P. J. WALSH; RUTH VOGEL; EDGAR J. EVANS

doi:10.1103/PhysRev.178.1274

Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor Films

P. J. WALSH, RUTH VOGEL, and EDGAR J. EVANS

Phys. Rev. 178, 1274 – Published 15 February 1969

Abstract

Studies performed on the conduction and switching phenomena in films of certain amorphous chalcogenide semiconductors indicate that the electrical switching may be associated with a field-influenced dielectric phase transition. The normalized conduction found at voltages below switching displays an Ohmic and an exponential region, both associated with the same conduction process. This conduction is independent of frequency from dc to 100 kHz.

Received 22 August 1968

DOI:https://doi.org/10.1103/PhysRev.178.1274

Authors & Affiliations

P. J. WALSH^*

Physics Department, Fairleigh Dickinson University, Teaneck, New Jersey 07666

RUTH VOGEL and EDGAR J. EVANS^†

Picatinny Arsenal, Dover, New Jersey 07801

^*Services at Picatinny Arsenal provided through Army Research Office-Durham under the Army Laboratory Cooperative Research Program.
^†Present address: Energy Conversion Devices (ECD), Inc., Troy, Mich.

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Vol. 178, Iss. 3 — February 1969

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