Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

Dong-Keun Ki, Seung-Geol Nam, Hu-Jong Lee, and Barbaros Özyilmaz
Phys. Rev. B 81, 033301 – Published 6 January 2010

Abstract

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene pn interface on the quantum-Hall edge-state equilibration position. The resistance of a pn device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor (ν) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral direction dependent change in the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge-states in a bipolar graphene system.

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  • Received 5 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.033301

©2010 American Physical Society

Authors & Affiliations

Dong-Keun Ki1, Seung-Geol Nam1, Hu-Jong Lee1,2,*, and Barbaros Özyilmaz3

  • 1Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
  • 2National Center for Nanomaterials Technology, Pohang 790-784, Republic of Korea
  • 3Department of Physics, National University of Singapore, Singapore 117542, Singapore

  • *Corresponding author; hjlee@postech.ac.kr

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Vol. 81, Iss. 3 — 15 January 2010

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