Changes in the Electronic Properties of Si Nanocrystals as a Function of Particle Size

T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, and L. J. Terminello
Phys. Rev. Lett. 80, 3803 – Published 27 April 1998
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Abstract

X-ray absorption and photoemission spectra have been used to measure the band edges of silicon nanocrystals with average diameters ranging from 1 to 5 nm. We compare the experimentally measured band edges to recent electronic structure calculations and find that the experimentally measured band gap is smaller than that predicted by theory.

  • Received 31 October 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.3803

©1998 American Physical Society

Authors & Affiliations

T. van Buuren, L. N. Dinh, L. L. Chase, W. J. Siekhaus, and L. J. Terminello

  • Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, Livermore, California 94550

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Vol. 80, Iss. 17 — 27 April 1998

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