Abstract
X-ray absorption and photoemission spectra have been used to measure the band edges of silicon nanocrystals with average diameters ranging from 1 to 5 nm. We compare the experimentally measured band edges to recent electronic structure calculations and find that the experimentally measured band gap is smaller than that predicted by theory.
- Received 31 October 1997
DOI:https://doi.org/10.1103/PhysRevLett.80.3803
©1998 American Physical Society