Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

Hiroyuki Nishikawa, Taiji Shiroyama, Ryuta Nakamura, Yoshimichi Ohki, Kaya Nagasawa, and Yoshimasa Hama
Phys. Rev. B 45, 586 – Published 1 January 1992
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Abstract

Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2β band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

  • Received 18 July 1991

DOI:https://doi.org/10.1103/PhysRevB.45.586

©1992 American Physical Society

Authors & Affiliations

Hiroyuki Nishikawa, Taiji Shiroyama, Ryuta Nakamura, and Yoshimichi Ohki

  • Department of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

Kaya Nagasawa

  • Department of Electrical Engineering, Shonan Institute of Technology, 1-1-25 Tsujido-Nishikaigan, Fujisawa 251, Japan

Yoshimasa Hama

  • Science and Engineering Research Laboratory, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

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Issue

Vol. 45, Iss. 2 — 1 January 1992

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