Abstract
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the transport through the transistor is extremely sensitive to elastic disorder. In particular, built-in curvature (random or regular) leads to the “elastic curvature blockade”: appearance of threshold bias voltage in the curve which can be larger than the Coulomb-blockade-induced one. In the case of a random curvature, an additional plateau in the dependence of the average current on a bias voltage appears.
9 More- Received 22 July 2021
- Revised 6 January 2022
- Accepted 19 January 2022
DOI:https://doi.org/10.1103/PhysRevResearch.4.013068
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society