• Open Access

Clusterization transition between cluster Mott insulators on a breathing kagome lattice

Xu-Ping Yao, Xiao-Tian Zhang, Yong Baek Kim, Xiaoqun Wang, and Gang Chen
Phys. Rev. Research 2, 043424 – Published 28 December 2020

Abstract

Motivated by recent experimental and numerical progress on various cluster Mott insulators, we study an extended Hubbard model on a breathing kagome lattice with a single electron orbital and 1/6 electron filling. Two distinct types of cluster localization are found in the cluster Mott regime due to the presence of the electron repulsion between neighboring sites, rather than from the on-site Hubbard interaction in the conventional Mott insulators. We introduce a unified parton construction framework to accommodate both types of cluster Mott insulating phase as well as a trivial Ferm liquid metal and discuss the phase transitions in the phase diagram. It is shown that, in one of the cluster localization phases, the strong intersite repulsion results into locally metallic behavior within one of two triangular clusters on the breathing kagome lattice. We further comment on experimental relevance to existing Mo-based cluster magnets.

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  • Received 25 August 2020
  • Revised 11 October 2020
  • Accepted 24 November 2020

DOI:https://doi.org/10.1103/PhysRevResearch.2.043424

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xu-Ping Yao1,*, Xiao-Tian Zhang1,*, Yong Baek Kim2, Xiaoqun Wang3,4, and Gang Chen1,5,†

  • 1Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, China
  • 2Department of Physics, University of Toronto, Ontario, Canada M5S 1A7
  • 3School of Physics and Astronomy, Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
  • 4Key Laboratory of Artificial Structures and Quantum Control of MOE, Shenyang National Laboratory for Materials Science, Shenyang 110016, China
  • 5State Key Laboratory of Surface Physics and Department of Physics, Institute of Nanoelectronics and Quantum Computing, Fudan University, Shanghai, 200433, China

  • *These authors contributed equally to this work.
  • gangchen@hku.hk

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Vol. 2, Iss. 4 — December - December 2020

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