Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO3

Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Zhicheng Zhong, Dennis Valbjørn Christensen, Merlin von Soosten, Arghya Bhowmik, Juan Maria García Lastra, Yunzhong Chen, Thomas Sand Jespersen, and Nini Pryds
Phys. Rev. Lett. 117, 096804 – Published 25 August 2016
PDFHTMLExport Citation

Abstract

The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO3/SrTiO3 heterostructure, which exhibits both high electron mobility exceeding 10,000cm2/Vs and low carrier density on the order of 1012cm2. Along with unambiguous Shubnikov–de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional sub-bands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 9 March 2016

DOI:https://doi.org/10.1103/PhysRevLett.117.096804

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Felix Trier1,*, Guenevere E. D. K. Prawiroatmodjo2, Zhicheng Zhong3, Dennis Valbjørn Christensen1, Merlin von Soosten1,2, Arghya Bhowmik1, Juan Maria García Lastra1, Yunzhong Chen1,†, Thomas Sand Jespersen2, and Nini Pryds1,‡

  • 1Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
  • 2Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
  • 3Max Planck Institute for Solid State Research, D-70569 Stuttgart, Germany

  • *To whom correspondence should be addressed: fetri@dtu.dk
  • yunc@dtu.dk
  • nipr@dtu.dk

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 117, Iss. 9 — 26 August 2016

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×