Abstract
In this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar layer. Results also clearly reveal the band bending and the notched band structure in the adjacent to the interface.
- Received 15 March 2012
DOI:https://doi.org/10.1103/PhysRevLett.109.246807
© 2012 American Physical Society