Spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides

Wen-Yu Shan, Hai-Zhou Lu, and Di Xiao
Phys. Rev. B 88, 125301 – Published 3 September 2013

Abstract

We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. The multiband effect in other doping regimes is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.

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  • Received 24 May 2013

DOI:https://doi.org/10.1103/PhysRevB.88.125301

©2013 American Physical Society

Authors & Affiliations

Wen-Yu Shan1, Hai-Zhou Lu2, and Di Xiao1

  • 1Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
  • 2Department of Physics and Centre of Theoretical and Computational Physics, University of Hong Kong, Pokfulam Road, Hong Kong, China

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Issue

Vol. 88, Iss. 12 — 15 September 2013

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