Effects of polymorphism on charge transport in organic semiconductors

Oana D. Jurchescu, Devin A. Mourey, Sankar Subramanian, Sean R. Parkin, Brandon M. Vogel, John E. Anthony, Thomas N. Jackson, and David J. Gundlach
Phys. Rev. B 80, 085201 – Published 12 August 2009
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Abstract

The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene is motivated by the demonstrated high-performance organic field-effect transistors and circuits based on this organic semiconductor, complemented by reduced complexity processing methods that enable this performance. We identify two polymorphs of this material and report on their crystal structure, formation, and the effect of the different molecular packings on the electronic properties. The polymorphs are interconvertible through a phase transition that occurs at T=294K. We study the variations in the electrical properties as a response to the structural changes induced by the phase transition in both single crystals and thin films, and discuss the technological implications that a room-temperature phase transition has on the performance and stability of devices fabricated with this organic semiconductor.

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  • Received 23 March 2009

DOI:https://doi.org/10.1103/PhysRevB.80.085201

©2009 American Physical Society

Authors & Affiliations

Oana D. Jurchescu1,2,*,†, Devin A. Mourey2, Sankar Subramanian3, Sean R. Parkin3, Brandon M. Vogel4, John E. Anthony3, Thomas N. Jackson2, and David J. Gundlach1,*,‡

  • 1Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 2Department of Electrical Engineering, Center for Thin Film Devices and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 3Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, USA
  • 4Department of Chemical Engineering, Bucknell University, Lewisburg, Pennsylvania 17837, USA

  • *Corresponding author.
  • oana.jurchescu@nist.gov
  • david.gundlach@nist.gov

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Issue

Vol. 80, Iss. 8 — 15 August 2009

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