Density functional theory description of hole-trapping in SiO2: A self-interaction-corrected approach

Mayeul d’Avezac, Matteo Calandra, and Francesco Mauri
Phys. Rev. B 71, 205210 – Published 26 May 2005

Abstract

We present a self-interaction-corrected (SIC) density-functional-theory (DFT) approach for the description of systems with an unpaired electron or hole such as spin-12 defect centers in solids or radicals. Our functional is easy to implement and its minimization does not require additional computational effort with respect to ordinary DFT functionals. In particular it does not present multiminima, as do the conventional SIC functionals. We successfully validate the method studying the hole self-trapping in quartz associated with the Al substitutional impurity. We show that our approach corrects for the well-known failures of standard DFT functionals in this system.

  • Figure
  • Received 1 March 2005

DOI:https://doi.org/10.1103/PhysRevB.71.205210

©2005 American Physical Society

Authors & Affiliations

Mayeul d’Avezac, Matteo Calandra, and Francesco Mauri

  • Laboratoire de Minéralogie-Cristallographie, case 115, 4 place Jussieu, 75252, Paris cedex 05, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 71, Iss. 20 — 15 May 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×