Doping and planar defects in the formation of single-crystal ZnO nanorings

Y. Ding, X. Y. Kong, and Z. L. Wang
Phys. Rev. B 70, 235408 – Published 6 December 2004

Abstract

We have recently reported the growth of freestanding, single-crystal, seamless nanorings of zinc oxide via a spontaneous self-coiling process during the growth of polar-nanobelts [X.Y. Kong et al., Science 303, 1348 (2004)]. The nanoring is made by coaxial and uniradius loop-by-loop winding of a fine ZnO nanobelt. An important fact is that each and every nanoring is made of a nanobelt that contains basal-plane planar defects, which are suggested to be important for leading the fastest growth of the nanobelt as well as lowering its elastic deformation energy. In this paper, high-resolution transmission electron microscopy is applied to investigate the nature of the planar defects in the nanobelts and in nanorings. The planar defects were initiated and formed by single-layer segregation of the doping element, such as indium, which was introduced in the growth process. The accumulation of impurity ions forms two vicinal InO octahedral layers parallel to the basal plane. They form “head-to-head” and “tail-to-tail” polar-inversion domain boundaries. For a nanobelt that self-coils into a nanoring, we found that the head-to-head and tail-to-tail polar-inversion domain boundaries are paired, thus, the polarity of the nanobelt is unchanged. Therefore, our data support the proposed model [X.Y. Kong et al., Science 303, 1348 (2004)] that the nanoring is initiated by circularly folding a nanobelt due to long-range electrostatic interaction between the surface polar charges on the two sides, and a loop-by-loop winding of the nanobelt forms a complete ring.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
4 More
  • Received 14 February 2004

DOI:https://doi.org/10.1103/PhysRevB.70.235408

©2004 American Physical Society

Authors & Affiliations

Y. Ding1, X. Y. Kong2, and Z. L. Wang1,2,*

  • 1School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
  • 2National Center for Nanoscience and Technology, Beijing 100080, People’s Republic of China

  • *Author to whom correspondence should be addressed; electronic address: zhong.wang@mse.gatech.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 70, Iss. 23 — 15 December 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×