Disorder-induced dephasing in semiconductors

S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch
Phys. Rev. B 61, 13088 – Published 15 May 2000
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Abstract

Microscopic calculations including energetic disorder and Coulomb correlations up to third order in the laser field are performed. The resulting four-wave-mixing signals show polarization-dependent dephasing induced by diagonal disorder. The correct modeling of this disorder-induced dephasing requires the proper inclusion of Coulomb correlations. The theoretical results are in good qualitative agreement with measurements performed on a variety of quantum-well samples.

  • Received 23 June 1999

DOI:https://doi.org/10.1103/PhysRevB.61.13088

©2000 American Physical Society

Authors & Affiliations

S. Weiser, T. Meier, J. Möbius, A. Euteneuer, E. J. Mayer*, W. Stolz, M. Hofmann, W. W. Rühle, P. Thomas, and S. W. Koch

  • Department of Physics and Material Sciences Center, Philipps University, Renthof 5, D-35032 Marburg, Germany

  • *Present address: Heidenhain GmbH, D-8392 Traunret, Germany.

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Vol. 61, Iss. 19 — 15 May 2000

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