InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas

E. Ribeiro, E. Müller, T. Heinzel, H. Auderset, K. Ensslin, G. Medeiros-Ribeiro, and P. M. Petroff
Phys. Rev. B 58, 1506 – Published 15 July 1998
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Abstract

InAs self-assembled quantum dots are grown in the vicinity of a two-dimensional electron gas. Transport experiments show a progressive reduction of the electron mobility with increasing dot density, which indicates the influence of the quantum dots on the electrical properties of the electron gas. A saturation of the mobility is observed for the highest dot density samples. Transmission electron microscopy studies confirm the existence of the dots and reveal the formation of a vertically aligned double dot. Calculations of scattering times due to repulsive potentials are in agreement with the experimental data and suggest that the self-assembled quantum dots act as controllable scattering centers that can be used to tailor the electron gas properties.

  • Received 4 February 1998

DOI:https://doi.org/10.1103/PhysRevB.58.1506

©1998 American Physical Society

Authors & Affiliations

E. Ribeiro

  • Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland

E. Müller

  • Labor für Mikro- und Nanostrukturen, Paul-Scherrer Institut, 5232 Villigen, Switzerland

T. Heinzel

  • Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland

H. Auderset

  • Labor für Mikro- und Nanostrukturen, Paul-Scherrer Institut, 5232 Villigen, Switzerland

K. Ensslin

  • Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland
  • Labor für Mikro- und Nanostrukturen, Paul-Scherrer Institut, 5232 Villigen, Switzerland

G. Medeiros-Ribeiro and P. M. Petroff

  • Materials Department, University of California, Santa Barbara, California 93106

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Vol. 58, Iss. 3 — 15 July 1998

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