Theory of the field-effect mobility in amorphous organic transistors

M. C. J. M. Vissenberg and M. Matters
Phys. Rev. B 57, 12964 – Published 15 May 1998
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Abstract

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The theory is applied to describe the experiments by Brown et al. [Synth. Met. 88, 37 (1997)] on solution-processed amorphous organic transistors, made from a polymer (polythienylene vinylene) and from a small molecule (pentacene). Good agreement is obtained, with respect to both the gate voltage and the temperature dependence of the mobility.

  • Received 13 January 1998

DOI:https://doi.org/10.1103/PhysRevB.57.12964

©1998 American Physical Society

Authors & Affiliations

M. C. J. M. Vissenberg*

  • Philips Research Laboratories, 5656 AA Eindhoven, The Netherlands
  • Instituut–Lorentz, University of Leiden, 2300 RA Leiden, The Netherlands

M. Matters

  • Philips Research Laboratories, 5656 AA Eindhoven, The Netherlands

  • *Electronic address: vissenbe@natlab.research.philips.com
  • Electronic address: matters@natlab.research.philips.com

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Issue

Vol. 57, Iss. 20 — 15 May 1998

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