Speckle in coherent x-ray reflectivity from Si(111) wafers

J. L. Libbert, R. Pindak, S. B. Dierker, and I. K. Robinson
Phys. Rev. B 56, 6454 – Published 15 September 1997
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Abstract

We report the observation of x-ray speckle in the reflected beam from Si(111) wafers illuminated at grazing incidence. An intense coherent 8-keV x-ray beam was prepared using a wiggler source and multilayer monochromator optics. We demonstrate that the speckle patterns are specific to the region of the sample that is illuminated. From the trade-off between surface sensitivity and signal as a function of perpendicular momentum transfer, we infer that the speckle is due to the surface morphology on a micrometer length scale. We document and explain the evolution of the speckle patterns from nearly specular at low qz to highly structured at larger qz.

  • Received 17 June 1997

DOI:https://doi.org/10.1103/PhysRevB.56.6454

©1997 American Physical Society

Authors & Affiliations

J. L. Libbert

  • Department of Physics, University of Illinois, Urbana, Illinois 61801

R. Pindak

  • Bell Laboratories/Lucent Technologies, Murray Hill, New Jersey 07974-0636

S. B. Dierker

  • Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120

I. K. Robinson

  • Department of Physics, University of Illinois, Urbana, Illinois 61801

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Vol. 56, Iss. 11 — 15 September 1997

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