2008 Volume E91.C Issue 10 Pages 1653-1657
Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 2×10-2Ω·cm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.6×10-4Ω·cm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50eV.
