Summary
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Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates Jang Yeon KWON Do Young KIM Hans S. CHO Kyung Bae PARK Ji Sim JUNG Jong Man KIM Young Soo PARK Takashi NOGUCHI Publication IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp.667-671 Publication Date: 2005/04/01 Online ISSN: DOI: 10.1093/ietele/e88-c.4.667 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Thin Film Transistors Keyword: poly-Si, TFT, plastic substrate, Full Text: PDF(621.1KB)>>
Summary: Poly-Si TFT (Thin Film transistor) fabricated below 170  using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm2/Vsec. | |||||
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