Abstract
We use new equations for the interstitial impurity diffusion fluxes under strain to study impurity atom redistribution in the vicinity of dislocations taking into account the strain generated by mentioned defects. Two levels of simulation are applied. First one is evaluation of coefficients that determine the influence of strain tensor components on interstitial diffusion fluxes in fcc structures for different kinds of atom jumps. For this purpose we have developed a model into the framework of molecular static method taking into account an atom environment as near the interstitial site as for the saddle-point configuration. The second level is modeling of interstitial segregation formation based on nonlinear diffusion equations taking strains generated by defects. The results show, that the distributions of the interstitials near the dislocations have quite complicated characters and the vacancy distribution has qualitatively different character as compared with carbon distribution.
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