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Electronic and Piezoelectric properties of half-Heusler compounds: A first principles study

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, , Citation D. P. Rai et al 2016 J. Phys.: Conf. Ser. 765 012005 DOI 10.1088/1742-6596/765/1/012005

1742-6596/765/1/012005

Abstract

We have investigated the semiconducting and piezoelectric properties of bulk MNiSn (M=Ti, Zr, Hf) type a half-Heusler compound with cubic F-43m symmetry by means of density functional theory (DFT). For electron exchange correlation a generalized gradient approximation (GGA) was used. Special attention was paid to establish a most favourble ground state configuration on magnetic as well as non-magnetic ordering. With fully optimized structure the electronic and ferroelectric calculation was performed. The formation of band gap was discussed on the basis of d-d orbital hybridization. Further we have calculated the spontaneous polarization by means of structural deformation.

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10.1088/1742-6596/765/1/012005